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1

On the reaction mechanism of GaAs MOCVD

Nishizawa, Jun-ichi, Kurabayashi, Toru

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 319 KB

english, 1990

2

80-ps and 4-ns pulse-pumped gains in a GaP-AlGaP semiconductor Raman amplifier

S. Saito, K. Suto, T. Kimura, Jun-Ichi Nishizawa

Journal:

IEEE Photonics Technology Letters

Year:

2004

Language:

english

File:

PDF, 173 KB

english, 2004

3

Production-based emissions, consumption-based emissions and consumption-based health impacts of PM2.5 carbonaceous aerosols in Asia

Takahashi, Kei, Nansai, Keisuke, Tohno, Susumu, Nishizawa, Masato, Kurokawa, Jun-ichi, Ohara, Toshimasa

Journal:

Atmospheric Environment

Year:

2014

Language:

english

File:

PDF, 1.99 MB

english, 2014

4

Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy

Nugraha, Osamu Itoh, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 476 KB

english, 1996

5

Photoassisted deposition process

Jun-Ichi Nishizawa

Journal:

Thin Solid Films

Year:

1988

Language:

english

File:

PDF, 524 KB

english, 1988

6

Molecular layer epitaxy of GaAs

Jun-ichi Nishizawa, Hiroshi Sakuraba, Yutaka Oyama

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

7

Surface reaction mechanism in MOCVD

Jun-ichi Nishizawa, Hiroshi Sakuraba, Toru Kurabayashi

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 682 KB

english, 1996

8

Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage

Jun-ichi Nishizawa, Toru Kurabayashi, Kyozo Kanamoto, Takashi Yoshida, Toru Oizumi

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 232 KB

english, 2003

9

Stoichiometry control and point defects in compound semiconductors

Jun-ichi Nishizawa

Journal:

Materials Chemistry and Physics

Year:

2000

Language:

english

File:

PDF, 1.10 MB

english, 2000

10

[IEEE 4th European Microwave Conference, 1974 - Montreux, Switzerland (1974.10.4-1974.10.6)] 4th European Microwave Conference, 1974 - Millimeter Wave Oscillations from Tunnett Diodes

Nishizawa, Jun-ichi, Ohmi, Tadahiro, Sakai, Toshi-aki

Year:

1974

Language:

english

File:

PDF, 5.08 MB

english, 1974

11

Photoluminescence and Photocapacitance of Se Vapor-Pressure-Dependent Deep Levels in Ga-Diffused Layers Formed in p-Type ZnSe Substrates

Sakurai, Fumitoshi, Suto, Ken, Sanda, Seishi, Nishizawa, Jun-ichi

Journal:

Journal of The Electrochemical Society

Year:

2002

Language:

english

File:

PDF, 63 KB

english, 2002

12

Frequency Variations of π-equivalent Circuit Parameters of a Junction Transistor †

ABE, ATSUSHI, NISHIZAWA, JUN-ICHI

Journal:

International Journal of Electronics

Year:

1966

Language:

english

File:

PDF, 742 KB

english, 1966

13

Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum

Otsuka, Nobuyuki, Oyama, Yutaka, Kikuchi, Hideyuki, Nishizawa, Jun-ichi, Suto, Ken

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 483 KB

english, 1998

14

Photocapacitance (PHCAP) Investigation of Proton Irradiated Si-PIN Diodes

Nishizawa, Jun-ichi

Journal:

Journal of The Electrochemical Society

Year:

1991

Language:

english

File:

PDF, 461 KB

english, 1991

15

Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

Yasuda, Arata, Suto, Ken, Takahashi, Yatsuhiro, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 448 KB

english, 2014

16

Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy

Yasuda, Arata, Sasaki, Tetsuo, Suto, Ken, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

17

A comparative study of THz spectra

NISHIZAWA, Jun-ichi, SUTO, Ken, SASAKI, Tetsuo, TANNO, Takenori

Journal:

Proceedings of the Japan Academy Series B Physical and Biological Sciences

Year:

2005

Language:

english

File:

PDF, 795 KB

english, 2005

18

[IEEE 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Milwaukee, WI, USA (2016.9.18-2016.9.22)] 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Reduction of input current harmonics based on space vector modulation for three-phase VSI with varied power factor

Nishizawa, Koroku, Nagaoka, Jun-ichi Itoh, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Year:

2016

Language:

english

File:

PDF, 418 KB

english, 2016

19

[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Quick compensation method of motor phase current sensor offsets without motor parameters for PMSM drive

Nishizawa, Koroku, Itoh, Jun-ichi, Nishizawa, Yoshinobu

Year:

2017

Language:

english

File:

PDF, 490 KB

english, 2017

20

[IEEE 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw (2017.9.11-2017.9.14)] 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Reduction of DC-link current harmonics for three-phase VSI over wide power factor range using single-carrier-comparison discontinuous PWM

Nishizawa, Koroku, Itoh, Jun-ichi, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Year:

2017

Language:

english

File:

PDF, 933 KB

english, 2017

21

[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Reduction of DC-Link Current Harmonics Over Wide Power-Factor Range for Three-Phase VSI Using Single-Carrier-Comparison Continuous PWM

Nishizawa, Koroku, Itoh, Jun-Ichi, Fujita, Satoru, Odaka, Akihiro, Toba, Akio, Umida, Hidetoshi

Year:

2018

Language:

english

File:

PDF, 955 KB

english, 2018

22

Monomolecular layer epitaxy of GaAs for ideal static induction transistor

Jun-ichi Nishizawa, Toru Kurabayashi

Journal:

Advanced Functional Materials

Year:

1997

Language:

english

File:

PDF, 276 KB

english, 1997

23

ChemInform Abstract: Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH3)3Al/ (CH3)3Ga/AsH3.

Yutaka Oyama, Hiroshi Watanabe, Fumio Matsumoto, Jun-ichi Nishizawa, Ken Suto

Journal:

Year:

2000

File:

PDF, 30 KB

2000

24

ChemInform Abstract: Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH3)3Ga/AsH3.

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun-ichi Nishizawa

Journal:

Year:

2002

Language:

english

File:

PDF, 32 KB

english, 2002

25

Quantitative evaluation of mefenamic acid polymorphs by terahertz–chemometrics

Makoto Otsuka, Jun-ichi Nishizawa, Jiro Shibata, Masahiko Ito

Journal:

Journal of Pharmaceutical Sciences

Year:

2010

Language:

english

File:

PDF, 278 KB

english, 2010

26

Layer growth in silicon epitaxy

Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo

Journal:

Journal of Crystal Growth

Year:

1972

Language:

english

File:

PDF, 854 KB

english, 1972

27

Silicon epitaxial growth

Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo

Journal:

Journal of Crystal Growth

Year:

1972

Language:

english

File:

PDF, 1.39 MB

english, 1972

28

Surface morphology of GaAs grown by vapor phase epitaxy

Yutaka Nonomura, Yasuo Okuno, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1979

Language:

english

File:

PDF, 1.14 MB

english, 1979

29

Silicon vapor phase epitaxy

Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 840 KB

english, 1982

30

Stoichiometry control for growth of III–V crystals

Nishizawa, Jun-ichi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 584 KB

english, 1990

31

Molecular layer epitaxy of silicon

Nishizawa, Jun-ichi, Aoki, Kenji, Suzuki, Sohbe, Kikuchi, Kazuhiko

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 242 KB

english, 1990

32

Molecular layer epitaxy and its fundaments

Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 581 KB

english, 1991

33

Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

Nugraha, Ken Suto, Osamu Itoh, Jun-ichi Nishizawa, Yasutoshi Yokota

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 423 KB

english, 1996

34

4408304 Semiconductor memory

Jun-ichi Nishizawa, Ohmi Tadahiro, Takashige Tamamushi

Journal:

Microelectronics Reliability

Year:

1984

Language:

english

File:

PDF, 88 KB

english, 1984

35

Heat treatment of gallium phosphide

Jun-ichi Nishizawa, Yasuo Okuno, Ken Suto, Toshio Sato, Shigenobu Yamokoshi

Journal:

Solid State Communications

Year:

1974

Language:

english

File:

PDF, 201 KB

english, 1974

36

Transit-time effects in semiconductors

Kotaro Okamoto, Jun-Ichi Nishizawa

Journal:

Solid-State Electronics

Year:

1966

Language:

english

File:

PDF, 511 KB

english, 1966

37

Potential, field and carrier distribution in the channel of junction field-effect transistors

Hiroyuki Tango, Jun-Ichi Nishizawa

Journal:

Solid-State Electronics

Year:

1970

Language:

english

File:

PDF, 1.50 MB

english, 1970

38

Mass spectrometric analysis of gas molecule adsorption on solid

Jun-Ichi Nishizawa, Toru Kurabayashi, Yasukazu Iwasaki

Journal:

Colloids and Surfaces

Year:

1989

Language:

english

File:

PDF, 393 KB

english, 1989

39

Surface reaction mechanism in Si and GaAs crystal growth

Jun-ichi Nishizawa, Hiroshi Sakuraba

Journal:

Surface Science Reports

Year:

1992

Language:

english

File:

PDF, 4.86 MB

english, 1992

40

Preface

Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 134 KB

english, 1994

41

Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Yutaka Oyama, Piotr Plotka, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 460 KB

english, 1994

42

Molecular layer epitaxy of GaAs

Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 521 KB

english, 1994

43

Ideal static induction transistor implemented with molecular layer epitaxy

Piotr Płotka, Toru Kurabayashi, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 529 KB

english, 1994

44

Molecular layer epitaxy

Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 816 KB

english, 1994

45

Laser projection CVD using the low temperature condensation method

Kohji Takashima, Kazuyuki Minami, Masayoshi Esashi, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 506 KB

english, 1994

46

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Takeo Ohno, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

47

Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

48

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 331 KB

english, 2003

49

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

50

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 203 KB

english, 2003